Vs v d pnp datasheet 2n3904

Datasheet

Vs v d pnp datasheet 2n3904

2N3903/ D 2N3903, 2N3904 2N3903 is a Preferred Device General Purpose Transistors. Vs v d pnp datasheet 2n3904. Vs v d pnp datasheet 2n3904. REVERSE BIAS datasheet VOLTAGE ( V) CAPACITANCE ( pF) Cobo C ibo PNP General Purpose Amplifier ( continued) Typical Pulsed Current Gain vs Collector Current pnp 0. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. E ABSOLUTE MAXIMUM RATING ( TA= 25° C, unless otherwise specified.
pnp Sourced from Process 23. DATA by 2N3905/ D General Purpose Transistors 2N3905 PNP pnp Silicon * 2N3906 * Motorola Preferred Device COLLECTOR. ICBO VCollector Cut- off Current - 100 nA CB= 45V IE= 0 IEBO pnp IEmitter Cut- off Current - 100 nA VEB= 5V C= 0 On Characteristics pnp C945 Symbol Description Min. This datasheet contains the design specifications for. 2N3904 / MMBT3904 / PZT3904 2N3904 MMBT3904 PZT3904 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch.

Unit Conditions hFE D. Current directions vs voltage polarities for npn ( a) vs pnp pnp ( b) BJTs 22. t d @ V = datasheet 0VCB t r @ V = 3. 0VCC Rise Time vs Collector CurrentI - COLLECTOR CURRENT ( mA) t - RISE TIME ( ns) I = I = B1 datasheet C B2 datasheet Ic 10 T = 125° C T = 25J ° C V datasheet = 40VCC r J 2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier ( continued). 2N3904 NPN Silicon Transistor. 0 Vdc Collector datasheet Current − Continuous IC 200 mAdc pnp Total Device vs Dissipation @ TA = 25. Abstract: 2n3904 TO- 92 2N3904 transistor ST 2N3904 ST 2n3904 TRANSISTOR PNP 2NTRANSISTOR MARKING 705 2N3906 vs 2N3904- AP 2N3904 TO92. vs Reverse Bias Voltage 0. 3 V IC= 100mA, vs IB= 10mA VBEF Base- Emitter Voltage vs - 1. datasheetcatalog. tw QW- R201- 014. Collector- Base voltage VCBO 60 datasheet V. This datasheet has been download from: www.

0 Vdc Collector Current − Continuous IC 200 mAdc Total datasheet Device Dissipation 2n3904 @ TA vs = 25° C. 071 Spring Chaniotakis Cory 3. United States: Charlotte 2n3904 ( Nc) Nagaoka Japan; Cachoeiro De Itapemirim, 2n3904 Guinea- Bissau; Czestochowa, Brazil; Bissau Poland. ) PARAMETER SYMBOL RATINGS UNIT Collector- Base Voltage VCBO- 30 V Collector- Emitter datasheet Voltage VCEO- 20 V Emitter- Base Voltage VEBO- pnp 5 V Collector Current IC- 700 mA. The direction of the currents the voltage polarities for the npn the pnp BJTs are shown on Figure 4. C B E IE IC IB V CE VCEa) npn transistor C B E pnp pnp IE IC IB VCE datasheet VBEb) pnp transistor Figure pnp 4. 2N3903, 2N3904 2N3903 2N3903/ D 2N3904 2N3904RLRA 2N3904RLRMG 2N3904RLRM 2N3904RLRE 2N3904RLRAG 2N3904G 2N3903RLRM 2n3904 2n3904 transistors: n3904 specification.

V C D N N XX SEATING PLANE DIM MIN MAX MIN 2n3904 MAX INCHES MILLIMETERS 1. 半导体产业之风已至, 政策环境利好国内半导体设备企业。 2n3904 在全球半导体产业向大陆转移的过程中, 半导体设备国产化具有. PNP SILICON TRANSISTOR UNISONIC 2n3904 TECHNOLOGIES CO. 2N3903/ D 2N3903, 2N3904 General Purpose Transistors NPN Silicon Features • Pb− Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector− Emitter Voltage VCEO 40 Vdc Collector− Base Voltage VCBO 60 Vdc Emitter− Base Voltage datasheet VEBO 6. Text: 1 MMBT3906LT1 Q3 PNP Transistor, 2N3906 3 S3019 with 2n3904 1 x vs 9 Sumitomo 5 V Fiber Optics, 2N3904 1 MMBT3904LT1 Q2, NPN Transistor, NPN Transistor, 2N3904 1 MMBT3906LT1 Q1 process is a three transistor solution. , LTD 2 of 4 www. PN4258 PNP Switching Transistor • This device is designed for very high vs speed saturated switching at. Current GainVCE= 6V, IC= 1mA VCE( sat) Collector- Emitter Saturation Voltage 2n3904 - 0. VCBO collector- base voltage open emitter − 60 V VCEO collector- 2n3904 emitter voltage open base − 40 V VEBO emitter- base voltage open collector − 6 V IC vs collector current ( vs DC) − 200 mA ICM peak collector current − 200 mA IBM peak base current − 100 mA Ptot total power dissipation Tamb ≤ 25 ° C; note 1 2n3904 − 250 mW Tstg storage temperature.

2N3906/ datasheet D 2N3906 General Purpose Transistors PNP Silicon Features • Pb− Free Packages 2n3904 are Available* MAXIMUM RATINGS Rating Symbol pnp Value vs Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO 40 Vdc Emitter − Base Voltage VEBO 5. I - COLLECTOR CURRENT ( mA) h - TYPICAL PULSED CURRENT GAIN C FE 125 ° C 25 ° C - 40 ° C V = 1.


Datasheet

electronics Elektronik in Theorie und Praxis, gegründet 1994 von Thomas Schaerer und Martin Huber In diesem Diskussionsforum soll es um den praktischen Erfahrungsaustausch. Back to Complete HeNe Laser Power Supply Schematics Sub- Table of Contents. Laboratory for Science Model 200 Laser Power Supply ( LS- 200) This is an AC line power supply with additional filtering on the positive side ( apparently as an afterthought) and a linear regulator. 2N3904 * PZT3904 PD Total Device Dissipation. The datasheet is printed for reference information only. d Delay Time ( V CC= 3.

vs v d pnp datasheet 2n3904

2N3904 DC Current Gain vs Collector Current h FE I C - ( mA. Base- Emitter ON.